Sputtering is one of the most widely used techniques for depositing thin films. The target is a plate of the materials to be deposited or the material from which a film is synthesized. Because it is connected to the negative terminal of a dc or RF power supply, the target is also known as the cathode. Typically, several kilovolts are applied to it. The substrate that faces the cathode may be grounded, electrically floating, biased positively or negatively, heated, cooled, or some combination of these. After evacuation of the chamber, a gas, typically argon, is introduced and
serves as the medium in which a discharge is initiated and sustained. Gas pressures usually range from a few to 100mtorr. After a visible glow discharge is maintained between the electrodes, it is observed that current flows and that a film condenses on the substrate. In vacuum, of course, there is no current flow and no film deposition. Microscopically, positive ions in the discharge strike the cathode plate and eject neutral target atoms through momentum transfer. These atoms enter and pass through the discharge region to eventually deposit on the growing film. In addition, other particles (secondary electrons, desorbed gases, and negative ions) as well as radiation (X-rays and photons) are emitted from the target. The deposition of Nb, Al, NbTi and Ta and its nitrides can be executed in this tool.

Electron-beam evaporation, uses a focused beam of electrons to heat the metal for deposition. A controlled deposition of thin-films is achieved. The material is kept in a water-cooled crucible and exposed to the electron beam, causing it to vaporize and condense on the wafers / samples. Planetary substrate rotation provides uniform deposition. Radiant heaters are provided for substrate heating. Option for Ion Assisted deposition, Co-deposition and Ion Etching is also available.

Electron-beam evaporation, uses a focused beam of electrons to heat the metal for deposition. A controlled deposition of thin-films is achieved. Both dielectrics and metals can be deposited using solid sources. The material is kept in a water-cooled crucible and exposed to the electron beam, causing it to vaporize and condense on the wafers / samples. Planetary substrate rotation provides uniform deposition. Radiant heaters are provided for substrate heating. Option for Ion Assisted deposition, Co-deposition and Ion Etching is also available.

Epitaxial CVD furnace capable of single wafer processing with sample sizes ranging from 2inch, 3inch and 4 inch wafers. Epitaxial and Selective Epitaxial deposition of undoped and P-doped Silicon is available.

Inductive couple Plasma chemical Vapor Deposition is a process where high density plasmas is created with the ICP source. This technique delivers deposition of high qualitydielectric films at low temperature with low damage. Low temperature deposition means that temperature sensitive films and devices can be processed successfully

Four stacked furnace capable of processing twenty five 4 inch wafers simultaneously at temperatures upto 950 deg C and low pressures of upto 500 millitorr.

First Nano oxidation and diffusion furnaces for oxidation and dopant diffusion. These are MOS clean and wafers processed here should never have gone through a metal deposition step, even if the metal has been removed.

Plasma Enhanced Chemical Vapour Deposition (PECVD) utilizes plasma to enhance the reaction of the precursors. It is a low temperature process when compared to conventional Chemical Vapour Deposition (CVD). It uses RF energy to generate plasma where the deposition can be done below 380C. The deposited material will be conformal in nature. The deposition rate is high compared to conventional CVD. The deposited material can have smooth surface. The deposited material will always be amorphous in nature.

System for oxidation and oxy-nitridation carrying gases O2, N2, N2O and Ar. This is a MOS clean system and wafers processed here should never have gone through a metal deposition step, even if the metal has been removed. Wafers should come from Level 0 / 1 wet benches only.

Sputtering is one of the most widely used techniques for depositing thin films. The target is a plate of the materials to be deposited or the material from which a film is synthesized. Because it is connected to the negative terminal of a dc or RF power supply, the target is also known as the cathode. Typically, several kilovolts are applied to it. The substrate that faces the cathode may be grounded, electrically floating, biased positively or negatively, heated, cooled, or some combination of these. After evacuation of the chamber, a gas, typically argon, is introduced and serves as the medium in which a discharge is initiated and sustained. Gas pressures usually range from a few to 100mtorr. After a visible glow discharge is maintained between the electrodes, it is observed that current flows and that a film condenses on the substrate. In vacuum, of course, there is no current flow and no film deposition. Microscopically, positive ions in the discharge strike the cathode plate and eject neutral target atoms through momentum transfer. These atoms enter and pass through the discharge region to eventually deposit on the growing film. In addition, other particles (secondary electrons, desorbed gases, and negative ions) as well as radiation (X-rays and photons) are emitted from the target.

Sputtering is one of the most widely used techniques for depositing thin films. The target is a plate of the materials to be deposited or the material from which a film is synthesized. Because it is connected to the negative terminal of a dc or RF power supply, the target is also known as the cathode. Typically, several kilovolts are applied to it. The substrate that faces the cathode may be grounded, electrically floating, biased positively or negatively, heated, cooled, or some combination of these. After evacuation of the chamber, a gas, typically argon, is introduced and serves as the medium in which a discharge is initiated and sustained. Gas pressures usually range from a few to 100mtorr. After a visible glow discharge is maintained between the electrodes, it is observed that current flows and that a film condenses on the substrate. In vacuum, of course, there is no current flow and no film deposition. Microscopically, positive ions in the discharge strike the cathode plate and eject neutral target atoms through momentum transfer. These atoms enter and pass through the discharge region to eventually deposit on the growing film. In addition, other particles (secondary electrons, desorbed gases, and negative ions) as well as radiation (X-rays and photons) are emitted from the target.

Tempress Three Stacked Furnace dedicated for dielectric annealing and Oxidation, at the temperatures ranges between (350°C to1000°C). The process is carried out at atmospheric pressures.