Dry Etch

The centre has a contaimantion policy defined for use of different mateirals. The contamination protocols for the dry etching tools at NNFC can be found here.

Deep-RIE

The SPTS LPX Pegasus Deep Reactive Ion Etching (DRIE) system is designed to provide high aspect ratio etching of single crystal silicon using inductively coupled plasma (ICP) and reactive ion etching (RIE). With Advanced Silicon Etch (ASE) licensed Bosch process, hundreds of micrometers thick of microstructures can be obtained up to ~20:1 aspect ratio.

RIE-F

Reactive Ion Etching (RIE) is an etching technology used in micro and nano fabrication wherein plasma is used to remove materials deposited on the substrate. Plasma is generated under low pressure by electromagnetic field. High energy ions from the plasma attack the wafer surface and react with it to remove the film. PlasmaLab system 100 ICP 180 is a Reactive Ion Etching tool from Oxford Instruments.

RIE-Cl

Reactive Ion Etching (RIE) is an etching technology used in micro and nano fabrication wherein plasma is used to remove materials deposited on the substrate. Plasma is generated under low pressure by electromagnetic field. High energy ions from the plasma attack the wafer surface and react with it to remove the film. PlasmaLab system 100 ICP 380 is a Reactive Ion Etching tool from Oxford Instruments.

Subscribe to RSS - Dry Etch