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Wet Processing

Chemical HF Vapouriser WB

Chemical Wetbench HF Vapor Phase Etcher is used for striction free silicon dioxide etching in microfabrication.

Process Capability

HF vapor phase etcher is used for Silicon dioxide etching using HF vapors which is a quasi-dry process.

  • Stiction free, Single step MEMS release
  • Etch-rate adjustable from 0 to about 30 µm/h
  • Single side SiO2 etching (back-side protected during process)
  • Dry process, no wetting problems of deep trenches devices.

Tool Capability

– Wafer temperature that can be adjusted from 35°C to 60 °C to regulate etch rates -Electrostatic or mechanical clamping options -Sample size from 1×1 cm pieces to full 6 inch wafers

This section will be updated soon.

Chemical Wetbench (Solvents/Bases) Level 3

Chemical Wetbench Solvent/bases is used for solvent clean/ Si etch of samples coming from lithography or other level 3 equipments.

Process Capability

All processes using Acetone, IPA or methanol. This bench is for metal liftoff, Litho mask cleaning and KOH silicon etch (LEVEL 3), Separate glassware for processing substrates containing Gold.

  • Bath1 – Acetone clean
  • Bath2 – IPA clean

Tool Capability

The Chemical Wetbench Solvent/bases has 2 different solvent baths to do dedicated cleans. Also, it has petridishes and ultrasonic bath for lift off process. Heater and beakers are provided for KOH etch of cut pieces. The bench is also fitted with a dump rinser and dryer. The baths are capable of cleaning 25 full 6 inch wafers simultaneously.

This section will be updated soon.

Chemical Wetbench Acid Clean – Level 1

Chemical wet bench Acid clean is used for cleaning of unprocessed, new cut pieces to full 4 inch Si wafers.

Process Capability

RCA/piranha of non-preprocessed (new) & wafers going into First nano furnaces, oxide and oxynitride etch of samples only from First nano furnaces or RTP2.

Tool Capability

Quartzware and PP petridishes for processing substrates going to/ coming from Level 1 equipments.

This section will be updated soon.

Chemical Wetbench Acid Clean (Bulk Processes) – Level 1

Chemical Wetbench Acid clean is used for cleaning up to 6 inch full, unprocessed silicon wafers.

Process Capability

RCA/ Piranha of full, unprocessed wafer going into First Nano Level 1 furnaces. The cleans performed here are high quality; final cleans which precede high temperature processing.

  •  Bath1 – Piranaha cleaning
  •  Bath2 – RCA1 cleaning
  •  Bath3 – RCA2 cleaning
  •  Bath4 – 50:1 HF
  •  Dump rinsing
  •  Drying

Tool Capability

The CMOS pre cleaning bench has 4 different acid baths to do dedicated processes. Also, it has a dump rinser and dryer to avoid the physical contaminants. The baths are capable of cleaning 25 full 6 inch wafers simultaneously.

This section will be updated soon.

Chemical Wetbench Acid Metal Level 3

Chemical wet bench Acid Metal is used for processing substrates with metals or exposed to metals.

Process Capability

Piranha/Metal etching/oxide etching of samples containing metal or processed in PECVD/ any LEVEL 3 equipment, Electroplating of Gold, Separate glassware for processing substrates containing Gold, Cleaning of glass slides.

  1. Bath1 – Piranaha cleaning
  2. Bath2 – Al etching
  3. Bath3 – Au etching
  4. Bath4 – Cr etching
  5. Bath 5 – oxide etching

Tool Capability

The Chemical wet bench Acid Metal has 5 different acid baths to do dedicated processes . Also, it has a dump rinser and dryer to avoid the physical contaminants. The baths are capable of cleaning 25 full 6 inch wafers simultaneously.

This section will be updated soon.

Chemical Wetbench Acid Semi-Clean- Level 2

Chemical wet bench Acid semi-clean is used for processing substrates coming from/ going to Level 2 equipments.

Process Capability

RCA/piranha of post-processed wafers from equipments in Level 2, oxide and nitride etching of samples processed in PECVD after chamber clean, samples from lithography which is not contaminated by metals.

  • Bath1 – RCA 1 cleaning
  • Bath2 – Nitride etching 85% Orthophosphoric acid
  • Bath3 – Oxide etching
  • Bath4 – 50:1 HF
  • Bath 5 – RCA 2

Tool Capability

The Chemical wet bench Acid Metal has 5 different acid baths to do dedicated processes. Also, it has a dump rinser and dryer to avoid the physical contaminants. The baths are capable of cleaning 25 full 6 inch wafers simultaneously.

This section will be updated soon.

Chemical Wetbench General (BULK Processes) LEVEL 3

Chemical Wetbench General (BULK processes) is used for oxide clean/ Si etch of samples containing metals including gold.

Process Capability

Si etch using KOH/TMAH with Gold contamination, nitride/ oxide etching of samples containing metal or processed in PECVD without chamber clean.

  • Bath1 – Oxide etch
  • Bath2 – Nitride etch
  • Bath 3 – 40% KOH (potassium hydroxide) at 800C
  • Bath 4 – 5% TMAH (potassium hydroxide) at 750C
  • Bath 5- Piranha clean

Tool Capability

The Chemical Wetbench Solvent/bases has 5 different acid baths to do dedicated processes. The bench is also fitted with a dump rinser and dryer. The baths are capable of processing cut pieces to 25 full 6 inch wafers simultaneously.

This section will be updated soon.

Chemical Wetbench Solvents/ Bases Semi-Clean – Level 2

Chemical wet bench Solvents/ bases semi-clean is used for solvent clean and Si etch of cut pieces to full 4 inch wafers.

Process Capability

All processes using Acetone, IPA or methanol. Allows stripping of photoresist from non-metal contaminated samples and Si etch using TMAH.

Tool Capability

Quartzware and PP pertidishes for processing substrates going to/ coming from Level 2 or Level 1 equipments.

This section will be updated soon.

Critical Point Dryer_Tousimis

This section will be updated soon.

This section will be updated soon.

Process Capability

 

Tool Capability

 

This section will be updated soon.