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Dry Etch

The centre has a contaimantion policy defined for use of different mateirals. The contamination protocols for the dry etching tools at NNFC can be found here.

DRIE_Oxford

The Oxford PlasmaPro100 Estrelas DRIE system is designed to provide high aspect ratio etching of single crystal silicon using inductively coupled plasma (ICP) and reactive ion etching (RIE). With Advanced Silicon Etch (ASE) licensed Bosch process, hundreds of micrometers thick of microstructures can be obtained up to ~25:1 aspect ratio

Single Load lock, Single process chamber
ICP Generator:2MHz, 5KW
RF Generator: HF (13.56MHz, 600W); LF (350-460KHz, 300 W)
Table Temperature from 0-70°C
4” wafer ESC chuck
Verity 1024GH OES End Point Detector
Process gases are: SF6, C4F8, O2, Ar, CHF3, CF4

This section will be updated soon.

DRIE_SPTS

The SPTS LPX Pegasus Deep Reactive Ion Etching (DRIE) system is designed to provide high aspect ratio etching of single crystal silicon using inductively coupled plasma (ICP) and reactive ion etching (RIE). With Advanced Silicon Etch (ASE) licensed Bosch process, hundreds of micrometers thick of microstructures can be obtained up to ~20:1 aspect ratio.

Process Capability

  • Bosch process (license)
  • Process : smooth scallops (<30 nm)
  • High aspect ratio (20:1)
  • BOX landing with no trenching or notching
  • Through Silicon Via ( TSV), high etch rates (>20microns/min)
  • 4” to random shape samples
  • Etch rate (3 µm/min >> 30 µm/min)

S.No

Recipe Name

Etch rate um/min

Scallops

1

 Process B

28.2 – 30

 1-1.2 um

2

 Process C HF

15

 600nm

3

 Process A LF

6

 110nm

4

 Process A HF

6

 200nm

5

 Process A LF

3

 23nm

6

 Isotropic si 25 depth,18 lateral
Tool Capability
  • Wafer size: 4” wafers to any random sample size less than 4 inch.
  • Coil source with 6 KW and Platen source with 600 W
  • Gases: C4F8, SF6 and O2
  • Bipolar electro static chuck (ESC)

This section will be updated soon.

Plasma Asher

Ashing tool for ashing resists and other polymeric materials.

Process Capability

  • Ashing resist like PMMA, MaN, S1813, AZ4562 AZ5214E etc
  • Processing small pieces up to 4 inch wafers
  • Descum process to remove any undeveloped regions or residues from the patterned regions
  • O2 plasma treatment for activating surface
Resist Resist Thickness  (~nm) Etch Rate  (~nm/min)
AZ5214e 1500 250
AZ4562 6200 250
MaN2403 360 260
PMMA950A4 200 600

Tool Capability

  • RF powered Bottom electrode : 600W @ 13.56MHz
  • Gases : O2 , Ar, N2 , CF4 .
  • Pressure: Pressure from 0.35mbar to 0.12mbar

This section will be updated soon.

RIE_Corial

Reactive Ion Etching (RIE) is an etching technology used in micro and nano fabrication wherein plasma is used to remove materials deposited on the substrate. Plasma is generated under low pressure by electromagnetic field. High energy ions from the plasma attack the wafer surface and react with it to remove the film. Corial 210L is a Reactive Ion Etching tool from Plasma-Therm. The material etch library primarily consists of Silicon dioxide, Niobium, Tantalum.

RF Power: Bottom Electrode – 13.56Mhz 600W
Temperature: -10﮲C to 80﮲C
Pressure :10mTorr to 100mTorr
Wafer clamping: Mechanical Clamping
Wafer Size: Small cut Piece to full 4-inch full wafer
Gases available: O2, Ar, N2, SF6, CF4, CHF3, C4F8 Cl2, BCl3

This section will be updated soon.

RIE_Oxford Plasma Pro 80

Reactive Ion Etching (RIE) is an etching technology used in micro and nano fabrication wherein plasma is used to remove materials deposited on the substrate. Plasma is generated under low pressure by electromagnetic field. High energy ions from the plasma attack the wafer surface and react with it to remove the film. Plasma Pro 80 is a Reactive Ion Etching tool from Oxford Instruments. The material etch library primarily consists of Silicon dioxide, Niobium and Niobium Nitride.

RF Power: Bottom Electrode – 13.56Mhz 600W
Wafer clamping: Mechanical Clamping
Wafer Size: Small cut Piece to full 4-inch full wafer
Gases available: O2, Ar, SF6, CHF3

This section will be updated soon.

RIE-Cl (Metal)_ Oxford (OI)

Reactive Ion Etching (RIE) is an etching technology used in micro and nano fabrication wherein plasma is used to remove materials deposited on the substrate. Plasma is generated under low pressure by electromagnetic field. High energy ions from the plasma attack the wafer surface and react with it to remove the film. PlasmaLab system 100 ICP 380 is a Reactive Ion Etching tool from Oxford Instruments.

Process Capability

  • Films that can be etched on RIE-Cl: Si, Compound Semiconductors and Metals.
  • Separate RF and ICP generators provide separate control over ion energy and ion density, enabling high process flexibility.

Tool Capability

  • Gases on Chlorine-based module: O2, Ar, N2, H2, Cl2, BCl3, CH4, HBr, SF6, CHF3
    3 KW, 2 MHz RF generator for 415V 50 Hz ICP 380 source
    RF powered lower electrode – 600 W, 13.56 MHz generator
    Julabo heater/Chiller unit for temperature from -30°C to +80°C
    Table heater (lower electrode heating) up to 120°C
    Helium assisted cooling for heat transfer.
    Wafers or Carrier Plate up to 150mm dia.
    2,3,4,6 inch Quartz Clamp
    Laser Interferometer 675nm, End Point Detector

This section will be updated soon.

RIE-F (Dielectrics)_ Oxford (OI)

Reactive Ion Etching (RIE) is an etching technology used in micro and nano fabrication wherein plasma is used to remove materials deposited on the substrate. Plasma is generated under low pressure by electromagnetic field. High energy ions from the plasma attack the wafer surface and react with it to remove the film. PlasmaLab system 100 ICP 180 is a Reactive Ion Etching tool from Oxford Instruments.

This section will be updated soon.

Process Capability

  • Films that can be etched on RIE-F: Si, Ge, SiGe, Oxide, Nitride, Carbide, Polymer, and other Dielectrics.
  • Separate RF and ICP generators provide separate control over ion energy and ion density, enabling high process flexibility.

Tool Capability

  • Gases on Fluorine-based module: H2, O2, Ar, N2, SF6, CF4, CHF3, C4F8
  • 3 KW, 2 MHz RF generator for 415V 50 Hz ICP 380 source
  • RF powered lower electrode- 600 W, 13.56 MHz generator
  • Helium assisted cooling for heat transfer
  • Julabo heater/Chiller unit for temperature from -30°C to +80°C
  • Wafer or Carrier Plate up to 150mm dia
  • 2,3,4,6 inch Quartz Clamp
  • Laser Interferometer 675nm, End Point Detector

This section will be updated soon.

RIE-X (Plasma Therm)

ICPRIE from Plasmatherm is dedicated to etching materials like PZT, AlN etc. The tool which has both chlorine and fluorine chemistries available is also used to etch novel materials which are currently not allowed in other RIE’s at NNFC.

Process Capability

• PZT and AlNEtch (upto1um)

Etch non-uniformity of <=5%

within wafer, and <=3% wafer to wafer

surface roughness <=2nm

• Sio2 etch rate ~300nm/min

• Etch Capability of CD <= 100nm
• Both F and Cl based chemistry

• Sputter etch using  Argon

• Anisotropic etch profile is feasible

Tool Capability

  • RF powered lower electrode
  • 600W@ 13.56MHz
  • RF powered top electrode
  • 2KW@2MHz
  • Helium assisted cooling for heat transfer
  • Platen temperature
    -10°C to +60°C
  • Wafers or Carrier plate 6’ inch wafer.
  • ESC Chuck – Mono-polar Electrostatic Clamping
  • Gases available.
    Cl2, BCl3, C4F8, CHF3, SF6, O2, Ar/N2

This section will be updated soon.

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