Conference articles

  1. Sooraj Sanjay, Navakanta Bhat, “Super-Nernstian ISFET Using Scaled Coplanar Multi-Gated Channels”, IEEE Sensors Conference, Vienna, 2023.


  2. Ananya Tiwari, Sooraj Sanjay, Navakanta Bhat, “Super-Nernstian Floating-Extended Gate Ion Sensitive Field Effect Transistor for pH sensing”, IEEE Sensors Conference, Vienna, 2023.


  3. Sooraj Sanjay, Sarath A, Navakanta Bhat, “Enabling Al2O3 top gate dielectrics on MoS2 mitigating the doping problem”, Graphene Week, Gothenburg, 2023.


  4. Deepak Sharma, Ayan Pal, Navakanta Bhat, “A two-dimensional (2D) WSe2 -based binary composite for ultrasensitive trace level room temperature NH3 sensing for non-invasive diagnosis”, IEEE Applied Sensing Conference (APSCON), Bengaluru, 2023.


  5. Sooraj Sanjay, Fahimul I Sakib, Mainul Hossain, Navakanta Bhat, “Super-Nernstian Isfet Combining Two-Dimensional WSe2/MoS2 Heterostructure with Negative Capacitance”, 242nd ECS Meeting, Atlanta, 2022.


  6. A Gupta, N Sakhuja, R Jha, N Bhat, “Giant Humidity Responsiveness of Platinum Functionalized WS2 Nanosheet Based Chemiresistors”, IEEE Sensors Conference, 1-4, 2020.


  7. S Benedict, A Nagarajan, K Thejas, A Alam, MS Illango, G Ezhilarasu, C S Prajapati, N Bhat, S Iyer “Heterogenous Integration of MEMS Gas Sensor using FOWLP: Personal Environment Monitors”, IEEE 70th Electronic Components and Technology Conference (ECTC), 824-828, 2020


  8. Ranajit Sai, S. Arackal, RDR Kahmei, N. Bhat, M. Yamaguchi, S. A. Shivashankar, “Crystallographic inversion mediated superparamagnetic relaxation in Zn-ferrite nanocrystals”, 64th Annual conference on Magnetism and Magnetic Materials (MMM-2019), (Paper ID: HH-08), Las Vegas, USA, 8th Nov. 2019.


  9. Ranajit Sai, RDR Kahmei, S. Arackal, N. Bhat, M. Yamaguchi, S. A. Shivashankar, “Superparamagnetic, partially-inverted Ni-ferrite and NiZn-ferrite thin film: Promising materials for on-chip RF inductor core”, 64th Annual conference on Magnetism and Magnetic Materials (MMM-2019), (Paper ID: GI02), Las Vegas, USA, 8th Nov. 2019.


  10. R. D. R. Kahmei, Ranajit Sai, S. A. Shivashankar, and N. Bhat, “Ni-substituted Zinc Ferrite thin nanostructured film: CMOS compatible deposition and excellent soft magnetic properties”, Magnetic Frontiers: Magnetic Sensors, (Paper ID: P3-1), Lisbon, Portugal, 26th June 2019


  11. S Benedict, N Bhat, “Plasma Oxidized Suspended Core-Shell Nanostructures for High Performance Metal Oxide Gas sensors”, IEEE Electron Devices Technology and Manufacturing Conference (EDTM), 157-159, 2019


  12. C. S. Prajapati, Sridar M. I., Samatha Benedict, Sujoy Ghosh, and Navakanta Bhat, "Activate Zeolite Filter: a Gas Sensor Signal Stabilization and Enhancement", IEEE Sensors Conference 2019.


  13. Sujoy Ghosh, Anujay Ghosh, Nived Kodavali, Chandra Shekhar Prajapati and Navakanta Bhat,"A Baseline Correction Model for Humidity and Temperature Compensation" IEEE Sensors Conference 2019.


  14. N. Sangeneni, N. Bhat and S A Shivashankar, “Superparamagnetic, nanocrystalline cobalt nickel zinc ferrite thin films, deposited at sub-200oC for RF CMOS applications”, IEEE Electron Devices Technology And Manufacturing conference, Kobe, Japan, 2018


  15. Bhawani Shankar, Ankit Soni, Sayak Dutta Gupta, Rudrarup Sengupta, Heena Khand, Nagboopathy Mohan, Srinivasan Raghavan, Navakanta Bhat, Mayank Shrivastava, “Design and Reliability of GaN Power HEMT Technology”, ECS Meeting Abstracts (2018)


  16. Shubhadeep Bhattacharjee, Pranandita Biswas, Swan Solanke, Rangarajan Muralidharan, Digbijoy Nath, Navakanta Bhat, “Optoelectronics based on Vertical Transport in Multi-layer MoS2”, Design Research Conference (2018)


  17. S Bhattacharjee, KL Ganapathi, S Mohan, N Bhat, “High Performance, Sub-thermionic MoS2Transistors using Tunable Schottky Contacts”, Design Research Conference, 2018


  18. Alison E. Viegas, Sudipta Dutta, Rekha S., M.S. Bobji, Srinivasan Raghavan and Navakanta Bhat, "3D Nano Capacitors using Electrodeposited Nickel Nanowires in Porous Anodic Alumina Template", International Workshop on the Physics of Semiconductor Devices, IWPSD, New Delhi, 2017


  19. Alison E Viegas, Rekha S, Srinivasan Raghavan, Navakanta Bhat, "A Novel 3D Capacitor design using Nanoporous and Nanotubular Anodic oxides", International Conference on Smart Materials, Structures, and Systems, ISSS, JN Tata Auditorium, IISc, 2017


  20. R. Soman, M. Sharma, N. Ramesh, D. Nath, R Muralidharan, K N Bhat, S. Raghavan, and N. Bhat, "Buried Channel Normally-off AlGaN/GaN MIS-HEMT with a p-n junction in GaN Buffer", Accepted for SISC, San Diego, USA, 2017


  21. Neha Sakhuja, Navakanta Bhat, "TiO2 thin film optimization for Ammonia Gas sensing", 19th International workshop on physics of semiconductor devices( IWPSD 2017), New Delhi, 2017


  22. Nivedita Basu, Navakanta Bhat, "A DNA sensor based on Impedance Spectroscopy using polyectrolytes as the immobilization agent", International Conference on Bio-sensing Technology, Riva del Garda, Italy, 7-10 May 2017


  23. S Bhattacharjee, KL Ganapathi, Navakanta Bhat, "Realizing P-FETs and photodiodes on MoS2 through area-selective p-doping via vacancy engineering", 75th Annual Device Research Conference (DRC), Notre Dame, IN, USA, 2017


  24. B Shankar, R Sengupta, SD Gupta, A Soni, N Mohan, N Bhat, “On the ESD behavior of AlGaN/GaN Schottky diodes and trap assisted failure mechanism” 39th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2017


  25. Samatha Benedict, Navakanta Bhat, “Plasma Oxidized W-WOx Sensor for Sub-ppm H2S Detection” Eurosensors Conference, 2017


  26. S Bhattacharjee, KL Ganapathi, Navakanta Bhat, “Realizing P-FETs and photodiodes on MoS2 through area-selective p-doping via vacancy engineering”, 75th Annual Device Research Conference (DRC), 2017


  27. S Chaurasia, P Sen, Navakanta Bhat, “Using dielectric droplets to improve sensitivity of capacitive sensors suitable for tactile sensing” IEEE 12th International Conference on Nano/Micro Engineered and Molecular Systems (NEMS), 2017/15/22


  28. Bhawani Shankar, Ankit Soni, Manikant Singh, Rohith Soman, KN Bhat, Srinivasan Raghavan, Navakanta Bhat, Mayank Shrivastava, “ESD Behavior of AlGaN/GaN HEMT on Si: Physical Insights, Design Aspects, Cumulative Degradation and Failure Analysis”, 30th International Conference on VLSI Design, 2017


  29. A Meersha, H.B. Variar, K Bhardwaj, A Mishra,S Raghavan, N Bhat, and M Shrivastava, “Record Low Metal–(CVD) Graphene Contact Resistance Using Atomic Orbital Overlap Engineering”, International Electron Devices Meeting (IEDM), pp119-122, 2016.


  30. S Hebbar, V Kumar, MS Bhat, N Bhat, “Handheld electrochemical workstation for serum albumin measurement”, IEEE DISCOVER, 2016


  31. S. Bhattacharjee, K. L. Ganapathi, S. Mohan and N. Bhat, "High Performance Functionalisation-free HfO2 Top Gate for MoS2 FETs with 6 nm EOT and SSmin~60 mV/decade", Oral Presentation: 47th IEEE Semiconductors Interfaces Specialist Conference, San Diego, CA, December 7-10, 2016.


  32. S. Bhattacharjee, K. L. Ganapathi, H. Chandrasekar, T. Paul, S. Mohan, A. Ghosh, S. Raghavan, N. Bhat, "Nitride Dielectric Environment to Suppress Surface Optical Phonon Dominated Scattering in High Performance Multilayer MoS2 FETs", Oral Presentation: 47th IEEE Semiconductors Interfaces Specialist Conference, San Diego, December 7-10, 2016.


  33. N. Basu, A.K. Konduri, P. Basu, M. Varma, N. Bhat, "Flexible, Label-free DNA Sensor using Platinum Dioxide as the sensing element", Biosensors, 2016


  34. N. Basu, A.K. Konduri, P. Basu, M. Varma, N. Bhat, "Flexible, Label-free DNA Sensor using Platinum Dioxide as the sensing element", Nanotech France, 2016


  35. V.Siva Rama Krishna, Bharadwaj Amrutur, Navakanta Bhat, S Sampath, Chakra Pani K, Sandeep K, Deepthi I, "Disposable screen printed electrode for percentage glycated hemoglobin sensor", Provisional Indian Patent filed.


  36. Implications of a Silicon Back Gate on Atomically Thin Devices, Hareesh Chandrasekar , Krishna Bharadwaj B, Srinivasan Raghavan and Navakanta Bhat, Oral Presentation, 18th International Workshop on the Physics of Semiconductor Devices (IWPSD-2015), Bangalore, India, December 2015.


  37. Quantifying Carriers in Fully Depleted GaN Buffers, Hareesh Chandrasekar, Manikant Singh, Srinivasan Raghavan and Navakanta Bhat, Oral Presentation, 18th International Workshop on the Physics of Semiconductor
    Devices (IWPSD-2015), Bangalore, India, December 2015.


  38. Comparison of DC Sputtering and Microwave synthesis for NiO based Gas Sensors, Monika Singh and Navakanta Bhat, 18th International Workshop on the Physics of Semiconductor Devices (IWPSD-2015), Bangalore, India, December 2015.


  39. Estimation of Background Carrier Concentration in Fully Depleted GaN Films, Hareesh Chandrasekar, Manikant Singh, Srinivasan Raghavan and Navakanta Bhat, Poster Presentation, Materials Research Society (MRS) Fall Meeting-2015, Boston, USA, November 2015.


  40. Optical Phonon Limited High Field Transport in Layered Materials , Hareesh Chandrasekar, Kolla Lakshmi Ganapati, Shubhadeep Bhattacharjee, Navakanta Bhat and Digbijoy N Nath, Poster Presentation, Materials Research Society (MRS) Fall Meeting-2015, Boston, USA, November 2015.


  41. Spotting 2D Atomic Layers on Aluminum Nitride Thin Films, Hareesh Chandrasekar, Krishna Bharadwaj B, Kranti Kumar Vaidyuala, Swati Suran, Navakanta Bhat, Manoj M Varma and Srinivasan Raghavan, Oral Presentation, Materials Research Society (MRS) Fall Meeting-2015, Boston, USA, November, 2015.


  42. Magnetic and electrochemical properties of nanostructured cobalt ferrite synthesised through microwave irradiation, Neelima Sangeneni, Navakanta Bhat, Srinivasrao A. Shivashankar, Oral Presentation, Materials Research Society (MRS) Fall Meeting-2015, Boston, USA, November, 2015.


  43. S.B Rudraswamy, P.K Basu, and Navakanta Bhat, “Sensitivity characteristics of Ag doped BaTiO3-CuO mixed oxide as Carbon-dioxide Sensor”, 2014-IEEE International Conference on Electronics, Computing and Communication Technologies (IEEE CONECCT), Indian Institute of Science (IISc), Bangalore, India, 06-07 Jan 2014.


  44. Deepak Ranjan Nayak, Siva Umapathy, Navakanta Bhat Title: Study of Silicon and Germanium Nanowires Growth by Plasma Enhanced Chemical Vapor Deposition,  International Union of Materials Research Society- International Conference in Asia (IUMRS-ICA), Dec, 2013 (Oral).


  45. Deepak Ranjan Nayak, Navakanta Bhat, Siva Umapathy, Surface Enhanced Raman Scattering on Anodized Alumina Templates for Bio-sensing Applications, International Workshop on Physics of Semiconductor Devices (IWPSD), 2013, Part 4, pp 577-579.


  46. B. Rashmi Rao, Navakanta Bhat, S. K. Sikdar, Thick PECVD Germanium Films for MEMS Application, International Workshop on Physics of Semiconductor Devices (IWPSD), 2013, Part 4, pp 469-471.


  47. R. Padmanabhan, N. Bhat, and S. Mohan, "Room Temperature-Processed TiO2 MIM Capacitors for DRAM Applications," Physics of Semiconductor Devices, DOI: 10.1007/978-3-319-03002-9_10, Part 1, pp. 37-39, 17th International Workshop on the Physics of Semiconductor Devices (IWPSD) 2013, Dec. 2013.


  48. R. Padmanabhan, N. Bhat, S. Mohan, Y. Morozumi, and S. Kaushal, “High-Performance MIM Capacitors based on TiO2/ZrO2/TiO2 and AlO-doped TiO2/ZrO2/TiO2 Dielectric Stacks for DRAM Applications,” Mater. Res. Soc. Symp. Proc., vol. 1561 (DOI: 10.1557/opl.2013.824), 2013 MRS Spring Meeting, Apr. 2013.


  49. Rohith Soman, S B Rudraswamy, P K Basu, and Navakanta Bhat, “METAL OXIDE GAS SENSOR ARRAY ON SINGLE CHIP ", ISSS National Conference on MEMS, Smart Materials, Structures and Systems, September 06-07, 2013, Pune, India.


  50. Oral: Ranajit Sai, K. J. Vinoy, N. Bhat, and S. A. Shivashankar, "CMOS-compatible and scalable deposition of nanocrystalline zinc ferrite thin film to improve inductance density of integrated RF inductor" 12th Joint MMM/Intermag Conference (2013).


  51.  K.L. Ganapathi, N. Bhat and S. Mohan, “ Reactive electron beam evaporated HfO2  films for CMOS gate dielectric applications”, ICMAT-2013 at Singapore (Oral presentation).


  52. R.Padmanabhan, N.Bhat, and S.Mohan, “High-Density Metal-Insulator-Metal Capacitors Using Gd2O3-Based Dielectrics,” International Conference on Emerging Electronics (ICEE) Proceedings (Oral Presentations), pp. 15-18, Dec. 2012.


  53. S B Rudraswamy, P K Basu and Navakanta Bhat, " BaTiO3 Based Carbon-dioxide Gas sensor",International Conference on Emerging Electronics (ICEE) Proceedings, pp. 129-132, Dec. 2012.

  54. Arun Mahodaya, Palash Basu, Navakanta Bhat, " CO2 gas sensing using Barium Strontium Titanate ", Proc. of International Conference on Smart Materials Structures and Systems, Jan 2012, INDIA

  55. Thejas, N. Bhat, R. Pratap, K. N. Bhat, " Fringe Field Junctionless FET as a Sensitive Displacement Sensor ", Proc. of International Conference on Smart Materials Structures and Systems, Jan 2012, INDIA

  56. Pramod M, Navakanta Bhat, Gaurab Banerjee, Bharadwaj Amrutur, K N Bhat and Praveen C Ramamurthy, "CMOS Gas Sensor Array Platform with Fourier Transform based Impedance Spectroscopy", Proceedings of 25th International Conference on VLSI Design, Jan-2012.

  57. A.V.S.S. Prasad and N. Bhat, "Characterization of SOIMUMPs Resistors", International Conference on Smart Materials Structures and Systems, January, 2012, Bangalore, India.

  58. Ajayan K.R., Navakanta Bhat, “Device Oriented Statistical Modeling Method for Process Variability in 45nm Analog CMOS Technology” IWPSD,
    XVI International Workshop on the Physics of Semiconductor Devices(IWPSD), Dec 2011.

  59. Sindhuja Sridharan, N. Bhat and K.N. Bhat, "pSi / ZnO heterojunction for UV detection," ICMR Summer Program on Emerging Materials for Thin Film Solar Cells, UCSB, 2011.

  60. Aditya Sankar Medury, Navakanta Bhat and K.N Bhat, "Temperature dependence of Threshold Voltage for Ultra Thin Silicon Film Symmetric Double-Gate MOSFETs", International Workshop on Physics of Semiconductor Devices, 18-24 December, 2011.

  61. Kausik Majumdar, Sangeeth Kallat and Navakanta Bhat, “Graphene Transistors for CMOS Applications : Opportunities and Challenges”, Invited Talk, International Workshop on Physics of Semiconductor Devices.  18-24 December, 2011.

  62. Ranajit Sai, Suresh D. Kulkarni, N. Bhat, S. A. Shivashankar, ‘Energy-efficient Synthesis of Ferrite Powders and Films’, MRS Fall Meeting, (2011).

  63. Ranajit Sai, Suresh D. Kulkarni, N. Bhat, S. A. Shivashankar, 'Low-thermal-budget solution processing of thin films of zinc ferrite and other complex oxides', MRS Fall Meeting, (2011).

  64. S. R. Krishna V., N. Bhat, B. Amrutur, Chakrapani K. and S. Srinivasan, “Detection of Glycated hemoglobin using 3-Aminophenylboronic acid modified Graphene oxide,” Biodevices, Rome, Italy, Jan 2011.

  65. K. Majumdar, K. V. R. M. Murali, N. Bhat, F. Xia and Y. M. Lin, “High On-Off Ratio Bilayer Graphene Complementary Field Effect Transistors,” International Electron Devices Meeting (IEDM), San Francisco, USA, Dec, 2010.

  66. Ranajit Sai, Suresh D. Kulkarni, N. Bhat, S. A. Shivashankar, 'Simultaneous preparation of Zinc Ferrite powder and deposition of film on Si (100) by a very quick and CMOS compatible Process to enable integration of ferrites to RFIC', 3rd Bangalore Nano 2010 - 'Walkway of Discovery', (2010).

  67. A. S. Medury, K. Majumdar, N. Bhat and K. N. Bhat, "A Compact Model incorporating Quantum Effects for Ultra-Thin-Body Double-Gate MOSFETs", International Nanoelectronics Conference(INEC), Jan 3-8, 2010, Hongkong, China.

  68. K. Majumdar and N. Bhat, “Effect of Volume Inversion in Ultra Thin Body Double Gate FET,” Proceedings of the IWPSD, New delhi, India, Dec. 2009.

  69. S. Sridharan, N. Bhat and K.N. Bhat, "pSi - ZnO solar cell fabricated by sol-gel method," Proceedings of the IWPSD, New delhi, India, Dec. 2009.

  70. A. S. Medury, K. Majumdar, N. Bhat and K. N. Bhat , "Ultra-Thin-Body Symmetric Double-Gate MOSFETs: A Perturbation Based Device Model Incorporating Quantization Effects", Proceedings of the IWPSD, pp 621-624, New Delhi, India, Dec. 2009.

  71. A. S. Medury, K. Majumdar, N. Bhat and K. N. Bhat , "Modeling the Threshold Voltage of Ultra-Thin-Body(UTB) Long Channel Symmetric Double-Gate (DG) MOSFETs", International Semiconductor Device Research Symposium(ISDRS), Dec 9-11, 2009, University of Maryland at College Park, USA.

  72. Arun V. T., K. N. Bhat and N. Bhat, "Effect of Annealing Temperature on Electrical Characteristics of Pt-Ge Schottky Junctions", Proceedings of the IWPSD, New Delhi, India, Dec 2009.

  73. K. Majumdar, K. Murali, N. Bhat and Y.M. Lin, “Self-Consistent Electronic Structure in Biased Graphene Nanoribbon,” Proceedings of the IWPSD, New Delhi, Dec. 2009.

  74.  B.P. Harish, N. Bhat, and M. B. Patil, “Bridging Technology-CAD and Design-CAD for Variability Aware Nano-CMOS Circuits”, IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS 1-5 Pages: 2309-2312, 2009.

  75. Ajayan K. R. and N. Bhat “Impact of Process Variability on 28nm Analog CMOS”  13th IEEE/VSI VLSI Design and Test Symposium July 2009.

  76. Ajayan K.R., Navakanta Bhat, “Impact of Annealing Temperature on Device Variability” IWPSD, XV International Workshop on the Physics of Semiconductor Devices(IWPSD), Dec 2009.

  77. C. Malhi, R. Pratap, N. Bhat, "High Sensitivity FET Integrated MEMS Deflection Sensor", IEEE Sensors 2009.

  78. C. Malhi, R. Pratap and N. Bhat, “Design of a High Sensitivity FET Integrated Microphone", Eurosensors September 2009, Procedia Chemistry, Vol. 1, pp.875-878, 2009.

  79.  C. Malhi, R. Pratap and N. Bhat, “MOSFET based MEMS Microphone with Wide Frequency Band”, International Conference on MEMS (ICMEMS 2009), IIT Madras, January 3-5, 2009.

  80. S. Khan, Thejas, G.K. Ananthasuresh and N. Bhat, "Design and Characterization of a Micromachined Accelerometer with Mechanical Amplifier for Intrusion Detection", Accepted at the National Conference on MEMS, Smart Structures and materials, October 14-16,2009.

  81. G. C. Deepak and N. Bhat, “RF Sputtered Er2O3 Thin Films as High Gate Dielectrics for Germanium MOS Devices, ECS Transactions, 19 (1) , 215th ECS Meeting, San, May 2009.

  82. Thejas, N. Bhat and R. Pratap, "High Accuracy Angular Rate Sensing using GyroFET," Proceedings of ICMEMS 2009, International Conference On MicroElectroMechanical Systems, Jan 2009, India.

  83. C. Venkatesh, N. Bhat, “Design and Characterisation of High Dynamic range Torsional Varactor”, Invited talk at the International Conference on MEMS (ICMEMS), 2009.

  84. A.V.S.S. Prasad and N. Bhat, “Test structure characterization and fault modeling of SOI MUMPs process,” International Conference on MEMS (ICMEMS), Jan. 2009.

  85. N. Bhat, B. Jayaraman, R. Pratap, S. Bagga and S. Mohan, "Integrated CMOS gas sensors," 2nd International Workshop on Electron Devices and Semiconductor Technology, 2009.

  86. S. Anand, Navakanta Bhat, K. N. Bhat, S. Mohan, "A Surface Modification Process for Lift-Off applications using Direct Write Laser Lithography," International Conference on MEMS (ICMEMS), IIT Madras, January 2009.

  87. Jairam S, Kusum Lata, Subir Roy and Navakanta Bhat, "Verification of a MEMS Based Adaptive Cruise Control System using Simulation and Semi-Formal Approaches", International Conference on Electronic Circuits and Systems, pp. 910-913, 2008.

  88. A.V.S.S. Prasad and N. Bhat, “Varactors using SOI MUMPs process,” International Conference on Emerging Microelectronics and Interconnection Technology (EMIT), Dec. 2008.

  89. S. A. Kannan, Satyam Dwivedi, Manodipan Sahoo Bharadwaj Amrutur and Navakanta Bhat, “Optimal power and noise allocation for analog and digital sections of a low power radio receiver”, IEEE ISLPED 2008.

  90. Vedavathi S, Jayashree S, K.N. Bhat, N. Bhat and S. Mohan, “Studies on KOH anisotropic etching for MEMS application,” International Conference on Emerging Microelectronics and Interconnection Technology (EMIT), Dec. 2008.

  91. Siva Rama Krishna Vanjari, Navakanta Bhat, Bharadwaj Amrutur and Sampath Srinivasan, "Micromachined electrochemical cell platform for biosensors," International Conference on Smart Materials, Structures and Systems (ISSS), 2008.

  92. Jairam S, Navakanta Bhat, “GyroCompiler: A Soft IP Model Analysis and Synthesis framwework for design of MEMS based Gyroscope,” International Conference on VLSI Design 2008 pp. 589-594.

  93. S. Hegde, Thejas and N. Bhat, " Universal Capacitance Sensor", Proceedings of ISSS 2008 International Conference On Smart Materials Structures and Systems, July 2008, India.

  94. Balaji Jayaraman, Navakanta Bhat and Rudra Pratap, "Thermal analysis of microheaters using mechanical dynamic response," International Conference on Smart Materials, Structures and Systems (ISSS), 2008.

  95. Jairam S, Kusum Lata, Subir Roy and Navakanta Bhat, “Formal Verification of a MEMS based adaptive cruise control system,” Proc. on Modeling and Simulation of Microsystems. 2008.

  96. Rakesh Gnana David J and Navakanta Bhat, "A low power, process invariant keeper design for high speed dynamic logic circuits", ISCAS 2008.

  97. Kusum Lata, Jairam Sukumar, Subir Roy, Jamadagni HS, Navakanta Bhat, "Case Studies Towards a Platform Independent Framework for Formal Verification of Hybrid Systems", VDAT 2008.

  98. N. Bhat and C. Venkatesh, "Impact of Beam Dimensions on Torsional Varactor", Invited paper at International Conference on Advanced Materials (ICAM), IUMRS 2007.

  99. P.R.Kumar, C.Venkatesh, R.Pratap and N. Bhat, "C-V Characterization of a MEMS Torsional Varactor", International Conference on Advanced Materials (ICAM), IUMRS 2007.

  100. Satyam Dwivedi, Bharadwaj Amrutur, Navakanta Bhat, "Optimizing Resolution of Signals in a Low IF Receiver", IEEE ISSCS 2007.

  101. Harish, BP and Bhat, Navakanta and Patil, Mahesh B, "Process Variation Aware Estimation of Static Leakage Power in Nano-CMOS", SISPAD 2007.

  102. Harish, BP and Bhat, Navakanta and Patil, Mahesh B, "CV based Analytical Modeling of Dynamic Power for 65-nm CMOS Library Characterization", VDAT 2007.

  103. Harish, BP and Bhat, Navakanta and Patil, Mahesh B, "Process Variability-Aware Statistical Hybrid Modeling of Dynamic Power Dissipation in 65 nm CMOS Designs", International Conference on Computing: Theory and Applications, 2007.

  104. C.Venkatesh and Navakanta Bhat, "Reliability of torsional varactor", International Symposium on physical and failure analysis of Integrated Circuits , ,July 2007.

  105. G.C. Deepak, Navakanta Bhat, and S.A. Shivashankar, "Structural and Electrical Properties of Er2O3 Thin Films Deposited by RF Sputtering for Gate Dielectric Applications", E1-0586, 211th ECS Meeting, Chicago, May 2007.

  106. Balaji Jayaraman and Navakanta Bhat, “High precision 16-bit readout gas sensor interface in 0.13ìm CMOS,” International Symposium on Circuits and Systems, pp. 3071 – 3074, May 2007.

  107. Balaji Jayaraman and Navakanta Bhat, “System level modeling and simulation of a gas sensor interface,” IMAPS India National Conference (IINC), December 2006.

  108. Balaji Jayaraman and Navakanta Bhat, “A temperature independent current source on 0.13ìm CMOS technology,” International Conference on Computers and Devices for Communication (CODEC), December 2006.

  109. S.Bagga, S.Mohan and N.Bhat," Effect of the Sensor Film Thickness on the Sensitivity of the Tin Oxide based LPG Gas Sensor" in proceedings of the Conference on Smart Structures and MEMS System for Aerospace Applications, December 1-2,2006, Hyderabad, India.

  110. S.Bagga, S.Mohan and N.Bhat," Influence of Substrate Temperature on the Optical and Structure Properties of Tin Oxide Films" in National Symposium on Instrumentation, October 12-15, 2006, Gwalior, India.

  111. S.Bagga, N.Bhat and S.Mohan, "Gas Sensor Interface ASIC on 0.7μm CMOS Technology" in proceedings of 10th VLSI Design and Testing Workshop, August 9-12,2006, Goa, India.

  112. K. ramakrishna, K. Jayant and N. Bhat, “A Novel CMOS Compatible Three Terminal 3D Tunable Micro Inductor”, IEEE VLSI Design and Test Symposium, 2006.

  113. K. , C. Kshirasagar and N. Bhat, “General Purpose Capacitive Sensing Circuit using Correlated Double sampling”, IEEE VLSI Design and Test Symposium, 2006.

  114. K. Jayant, Hithesh Gatty and Navakanta Bhat, “A novel low actuation Voltage switch using the concept of displacement amplification”, Indo-Chinese Workshop on MEMS, 2006.

  115. B.P. Harish and Navakanta Bhat, “Resistive Modeling of Estimation of Static Leakage Power in Nanoscale CMOS”, IMAPS India National Conference, 2006.

  116. Jairam S and Navakanta Bhat, "Integrated stability analysis methods for Hybrid Systems." VLSI Design and Test Symposium 2006.

  117. N. Bhat, “SOC Technology: CMOS and Beyond”, Invited tutorial at the Asia South Pacific International Conference on Embedded Systems, July 2005.

  118. B.P. Harish, Navakanta Bhat, and Mahesh B. Patil, “Modeling of the effects of process variations on circuit delay at 65nm”, IEEE CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS, PROCEEDINGS pp.  761-764, 2005.

  119. Rajesh Sangati, Sowjanya Syamala and Navakanta Bhat, "Novel test structure to emulate capacitance variations of a rate-grade MEMS gyroscope," IEEE Asian Solid-State Circuits Conference (ASSCC), pp. 413-416, 2005.

  120. C.Venkatesh,Navakanta Bhat, "Issues in design of torsional MEMS varactor", Fourth ISSS conference, Bangalore, July 28-30, 2005.

  121. C. Venkatesh, K.J.Vinoy and N. Bhat, “Application of Torsional Varactor in the design of phase shifters” International Conference on MEMS and Semiconductor Nanotechnology, IIT Kharagpur, December 2005.

  122. R. Srinivasan and N. Bhat, “Impact of channel engineering on unity gain frequency and noise figure in 90nm NMOS transistor for RF application”, 18th International VLSI Design Conference, Calcutta , January 2005.

  123. R. Srinivasan and N. Bhat, “Impact of Gate-Drain/Source Overlap on Noise Figure in 90nm NMOS Transistor for RF Applications”, International Symposium on Microwaves, 2004.

  124. J.P.Kulkarni, N.Bhat, “Improving Tuning Range in Varactors using Poly-Silicon depletion Effect”, Asia Pacific Microwave Conference, New Delhi, 2004.

  125. J.P.Kulkarni, N.Bhat, “Process technique for improving the tuning range in MOS varactor”, Proceedings of the IEEE INDICON, pp. 534-537, 2004.

  126. B.P.Harish, N. Bhat, “Characterization of 65nm CMOS NAND gate delay sensitivity on gate length and implant dose variations”, IINC 2004.

  127. B.P.Harish, R.Srinivasan and N. Bhat, “Process Sensitivity Evaluation of 90nm CMOS Technology with Gate to Source/Drain Overlap Length as a Device Design Parameter”, 8th IEEE VLSI Design and Test Workshops 2004.

  128. Jairam S, C. Venkatesh, N. Bhat, S. Singh, and R. Pratap, "A quasi static model for a simply supported beam in a circuit simulation framework", in Proc. International Conference on VLSI 2004 Pp. 642-645.

  129. R. Sangati, S. Syamala and N. Bhat, “Capacitance Sensing Techniques for MEMS Gyroscope”, 8th IEEE VLSI Design and Test Workshops 2004.

  130. C. Venkatesh and N. Bhat, “A MEMS Oscillator based on Displacement Sensing Principle”, 8th IEEE VLSI Design and Test Workshops 2004.

  131. R. Srinivasan and N. Bhat, “Reassessment of Channel Engineering in sub-100nm MOSFETs”, 8th IEEE VLSI Design and Test Workshops 2004.

  132. H C Srinivasaiah and N. Bhat, “Response Surface Modeling of 100nm CMOS Process Technology Using Design of Experiment”", 17th International VLSI Design Conference, 2004, Bombay.

  133. M. P.Singh, C.S.Thakur, K.Shalini, T. Shripathi, N. Bhat and S.A.Shivashankar, “ A Comparative Study of Erbium Oxide and Gadolinium Oxide High-K Dielectric Thin Films Grown by Low Pressure Metalorganic Chemical Vapour Deposition (MOCVD) Using -Diketonates as Precursors”, 204th Meeting of Electrochemical Society, USA, 2004.

  134. N. Bhat and S. Pamidighantam, “MEMS and Applications&rdqrdquo;, Tutorial at IEEE TENCON 2003, October 2003, Bangalore.

  135. M.P.Singh, G.C.Deepak, N. Bhat and S.A.Shivashankar, “Electrical Characterization of Gd2O3 Deposited by Low Pressure Metalorganic Chemical Vapour Deposition” INAE Conference on Nanotechnology, Chandigarh, December 2003.

  136. C.S.Thakur and N. Bhat, “Impact of Gate to Source/Drain Overlap for Analog CMOS Circuit Application in sub-100nm Technology”, 7th IEEE VLSI Design and Test Workshops 2003, Bangalore.

  137. K. Gupta and N. Bhat, “A Low Power Circuit to Generate Neuron Activation Function and its Derivative using Back Gate Effect”, 7th IEEE VLSI Design and Test Workshops 2003, Bangalore.

  138. N. Bhat, C. Venkatesh and S. Pati, “Micro Electro Mechanical Systems (MEMS): An Overview”, Tutorial at 7th IEEE VLSI Design and Test Workshops 2003, Bangalore.

  139. S. Deb and N. Bhat, “Design and Implementation of Passive RF Tag IC”, 7th IEEE VLSI Design and Test Workshops 2003, Bangalore.

  140. N. Bhat and S. Pamidighantam, “MEMS and Applications”, Tutorial at IEEE TENCON 2003, Bangalore.

  141. C. Venkatesh, S. Pati and N. Bhat, “Torsional MEMS Varactor with Low Actuation Voltage” 2nd International Conference on Materials for Advanced Technologies, Singapore 2003.

  142. S. Pati, C. Venkatesh, N. Bhat and R. Pratap, “Voltage Controlled Oscillator Using Tunable MEMS Resonator”, 2nd International Conference on Materials for Advanced Technologies, Singapore 2003.

  143. M.P.Singh, C.S.Thakur, K.Shalini, T. Shripathi, N. Bhat and S.A.Shivashankar, “A Comparative Study of Erbium Oxide and Gadolinium Oxide High-K Dielectric Thin Films Grown by Low Pressure Metalorganic Chemical Vapour Deposition (MOCVD) Using b-Diketonates as Precursors”, 204th Meeting of Electrochemical Society, USA 2003.

  144. G.C.Deepak, M.S.Dharmapraksh, N. Bhat and S.A.Shivashankar, “Electrical Characterization of MOCVD grown HfO2 Thin Films for Gate Dielectric Applications”, 12th International Workshop on Physics of Semiconductor Devices, Chennai, 2003.

  145. A. K. Pugalia, J.P. Kulkarni, N. Bhargava and N. Bhat, “Single Pocket Halo Sensitivity in 100nm Ananlog Transistor Design”, 12th International Workshop on Physics of Semiconductor Devices, Chennai, pp. 603-605, 2003.

  146. A. Kumar, R. Pratap and N. Bhat, “Modeling and Simulation of Thermalization Profile of Sputtered Atoms in a Glow Discharge Cell”, 12th International Workshop on Physics of Semiconductor Devices, Chennai, pp. 564-566, 2003.

  147. R Srinivasan and N. Bhat, “Effect of Scaling on the Non-Quasi-Static Behaviour of the MOSFET for RF IC's, 16th International VLSI Design Conference 2003, New Delhi.

  148. M.P. Singh, C.S. Thakur, K. Shalini, N. Bhat and S.A. Shivashankar, Characterization of a Potential Gate Dielectric: MOCVD Grown Erbium Oxide on Silicon, Electro Chemical Society Conference, Paris, 2003.

  149. H C Srinivasaiah and N. Bhat, “Implant dose sensitivity of 0.1mm CMOS inverter delay", 7th ASPDAC / 15th International VLSI Design Conference, 2002, Bangalore.

  150. H C Srinivasaiah and N. Bhat "Statistical modelling of 0.1mm NMOS device characteristics for implant dose variations", 6th IEEE VLSI Design & Test workshop-2002, Bangalore.

  151. K. Maitra and N. Bhat, "Poly-reoxidation Process Step for Suppressing Edge Direct Tunneling (EDT) Through Ultrathin Gate Oxides in NMOSFETs", 6th IEEE VLSI Design & Test workshop-2002.

  152. Gupta and N. Bhat, "Hardware realisation of a digitally controllable neuron activation function and its derivative for extremely low power applications", 6th IEEE VLSI Design & Test workshop-2002.

  153. N. Bhat, “CMOS Technology Issues in Mixed Signal Design” Invited Tutorial, 6th IEEE VLSI Design & Test workshop-2002, Bangalore.

  154. P K Saxena and N. Bhat, "Single Event Upset Response of a 0.09mm SRAM cell using 2D and 3D simulation", 6th IEEE VLSI Design & Test workshop-2002, Bangalore.

  155. M. P. Singh, C. S. Thakur, N. Bhat, and S. A. Shivashankar, “A study of Al2O3:C films on Si(100) grown by low pressure MOCVD”, Material Research Society fall Meeting USA 2002.

  156. H.C.Srinivasaiah and N. Bhat, “Optimization of 0.1mm NMOS Transistor using Disposable Spacer Technique”, 5th IEEE VLSI Design and Test Workshop, 2001.

  157. Simi E., Sudheer S.S. and N. Bhat, “Dual Vt Technology using Dual Thickness Gate Oxide”,  5th IEEE VLSI Design and Test Workshop, 2001.

  158. H C Srinivasaiah and N. Bhat, "Simulation Study of Implant Dose Sensitivity of a 0.1 mm NMOSFET", 11th International Workshop on The Physics of Semiconductors 2001.

  159. N. Bhat, “Circuit and Process Perspectives for the Transistor Design in the Deep Sub-micron Technology”, Invited talk at the National seminar on VLSI: Systems, Design and Technology, 2000.

  160. Chheda S, Bhat N, Tsui P, Gonzales S, Cave N, Fu CC, Huang F, Nangia A, Choi PSJ, Collins S, “Gate length and threshold voltage dependent non-linearity in the hot carrier DC lifetime extrapolation for sub 100nm NMOS devices”, PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), vol. 3881, pp.175-185, 1999.

  161. N. Bhat, P. Chen, P. Tsui, A. Das, M. Foisy, Y. Shiho, J. Higman, J-Y Nguyen, S. Gonzales, S. Collins, D. Workman, “Hot carrier reliability considerations in the integration of dual gate oxide transistor process on a sub-0.25µm technology for embedded applications,” International Electron Device Meeting, (IEDM) 1998.

  162. N. Bhat, H. Chuang, P. Tsui, R. Woodruff, J. Grant, R. Kruth, A. H. Perera, S. Poon, S. Collins, D. Dyer, V. Misra, I. Yang, S. Venkatesan, P. V. Gilbert, “Performance, standby power, and manufacturability trade-off in transistor design consideration for 0.25-µm technology,” SPIE Microelectronics Device Technology conference, 1998.

  163. H. Oi, Y. Shiho, P. Chen, N. Bhat, “Dual Gate Oxide Process Integration for High Performance Embedded Memory Products”,  Solid state Device Meeting, 1998.

  164. Venkatesan S, Gelatos AV, Misra V, Smith B, Islam R, Cope J, Wilson B, Tuttle D, Cardwell R, Anderson S, Angyal M, Bajaj R, Capasso C, Crabtree P, Das S, Farkas J, Filipiak S, Fiordalice B, Freeman M, Gilbert PV, Herrick M, Jain A, Kawasaki H, King C, Klein J, Lii T, Reid K, Saaranen T, Simpson C, Sparks T, Tsui P, Venkatraman R, Watts D, Weitzman EJ, Woodruff R, Yang I, Bhat N, Hamilton G, Yu Y, “A high performance 1.8V, 0.20 m CMOS technology with copper metallization”, pp. 769-772, INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) 1997.

  165. Wang AW, Bhat N, Saraswat KC, “TMCTS for gate dielectric in thin film transistors”, MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS, vol. 424    pp. 281-286, 1997.

  166.  T.C.Yang, N.Bhat, and K.C. Saraswat, “Effect of interface stress on reliability of gate oxide,” 4th Symposium on Silicon nitride and silicon oxide thin insulating films. 191st meeting of the ECS, May 1997 (invited paper).

  167. V. Subramanian, N. Bhat, and K.C. Saraswat, “Accelerated breakdown in thin oxide films due to interfacial stress and carrier depletion,” Material Research Society  spring meeting, 1996.

  168. N. Bhat, A. Wang and K.C. Saraswat, “Effect of annealing ambient on performance and reliability of LPCVD oxides for TFTs,” Material Research Society spring meeting, 1996.

  169. N. Bhat, M.Cao and K.C.Saraswat, “Bias temperature instability in hydrogenated polysilicon thin film transistors,” Society for Information Display conference, 1995.

  170. N. Bhat and K.C.Saraswat, “Interface-state generation in deposited oxides due to bias temperature stress,” Electrochemical Society extended abstracts, 1994.