Two stacked furnace dedicated for processing twenty five 4 “wafers simultaneously and temperatures upto 1150 deg C.
Tube 3 Drive in: Drive-in after doping (Level 1, MOS clean). Wafers should come from Level 1 wet benches only after mandatory RCA clean carried out just before furnace entry.
Tube 4 Annealing: metal contact annealing (Al,Ti,W)
Tube 3 Drive in: Gases available for drive-in are Ar, N2 and O2
Tube 4 Annealing: Gases available for drive-in are H2 ,O2 And N2
