Reactive Ion Etching (RIE) is an etching technology used in micro and nano fabrication wherein plasma is used to remove materials deposited on the substrate. Plasma is generated under low pressure by electromagnetic field. High energy ions from the plasma attack the wafer surface and react with it to remove the film. PlasmaLab system 100 ICP 180 is a Reactive Ion Etching tool from Oxford Instruments.
Gases on Fluorine-based module: H2, O2, Ar, N2, SF6, CF4, CHF3, C4F8
3 KW, 2 MHz RF generator for 415V 50 Hz ICP 380 source
RF powered lower electrode- 600 W, 13.56 MHz generator
Helium assisted cooling for heat transfer
Julabo heater/Chiller unit for temperature from -30°C to +80°C
Wafer or Carrier Plate up to 150mm dia
2,3,4,6 inch Quartz Clamp
Laser Interferometer 675nm, End Point Detector
Day: 1st and 3rd Tuesday of every month
Slot timing: 14:30 to 17:00 Hours
Training Rules