Rapid Thermal Anneal system 2 (RTP)

System for oxidation and oxy-nitridation carrying gases O2, N2, N2O and Ar. This is a MOS clean system and wafers processed here should never have gone through a metal deposition step, even if the metal has been removed. Wafers should come from Level 0 / 1 wet benches only.

Oxide and oxynitride thicknesses up to 20nm

  • Sample Size from Small pieces to a single 6” full wafer
  • Temperatures up to 1100 deg C
  • Ramp rates from 20 deg C/s to 200 deg C/s
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