Rapid Thermal Anneal system 1 (RTP)

RTP system which heats silicon wafers to high temperatures (up to 1100 °C ) on a timescale of several seconds or less. During cooling, however, wafer temperatures must be brought down slowly to prevent dislocations and wafer breakage due to thermal shock, Available gases N2,Ar,O2 AndH2

It can used for Annealing Contact Alloying, Rapid Thermal Oxidation (RTO), Rapid Thermal Nitridation (RTN),Densification and Crystallization, Silicidation etc.

  • Sample Size from Small pieces to a single4 ” full wafer
  • Temperatures up to 1100 deg C
  • Ramp rates from 20 deg C/s to 200 deg C/s
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