Furnace Processing

System for oxidation and oxy-nitridation carrying gases O2, N2, N2O and Ar. This is a MOS clean system and wafers processed here should never have gone through a metal deposition step, even if the metal has been removed. Wafers should come from Level 0 / 1 wet benches only.

RTP system which heats silicon wafers to high temperatures (up to 1100 °C ) on a timescale of several seconds or less. During cooling, however, wafer temperatures must be brought down slowly to prevent dislocations and wafer breakage due to thermal shock, Available gases N2,Ar,O2 AndH2

It can used for Annealing Contact Alloying, Rapid Thermal Oxidation (RTO), Rapid Thermal Nitridation (RTN),Densification and Crystallization, Silicidation etc.

Two stacked furnace dedicated for processing twenty five 4 “wafers simultaneously and temperatures upto 1150 deg C. 

First Nano oxidation and diffusion furnaces for oxidation and dopant diffusion. These are MOS clean and wafers processed here should never have gone through a metal deposition step, even if the metal has been removed.

Four stacked furnace capable of processing twenty five 4 inch  wafers simultaneously at temperatures upto 950 deg C and low pressures of upto 500 millitorr.