Inductive couple Plasma chemical Vapor Deposition is a process where high density plasmas is created with the ICP source. This technique delivers deposition of high qualitydielectric films at low temperature with low damage. Low temperature deposition means that temperature sensitive films and devices can be processed successfully
Process Capability
Materials Deposited:
Sample Size: Small cut Piece to full 6”inch full wafer
Samples Materials
Tool Spec
Substrate temp range (DegC) : 0 to 350
2 Temperature Mode:
Chiller Mode < 80degC > Heater Mode
Pressure : (5 to 80) mTorr
RF power : 2MHz, 600W
ICP power : 13.56MHz, 3kW
Gas Flows:
Carrier Gas: PN2, Ar
Precursors Gas : NH3, SF6, O2, SiH4, N2O
