Plasmatherm ICPRIE

ICPRIE from Plasmatherm is dedicated to etching materials like PZT, AlN etc. The tool which has both chlorine and fluorine chemistries available is also used to etch novel materials which are currently not allowed in other RIE's at NNFC

•PZT and AlNEtch (upto1um)

     Etch non-uniformity of <=5% 

     within wafer, and <=3% wafer to wafer

     surface roughness <=2nm

•Sio2 etch rate ~300nm/min

•Etch Capability of CD <= 100nm
 
•Both F and Cl based chemistry

•Sputter etch using  Argon

•Anisotropic etch profile is feasible

  • RF powered lower electrode
  • 600W@ 13.56MHz
  • RF powered top electrode
  • 2KW@2MHz
  • Helium assisted cooling for heat transfer
  • Platen temperature
  • -10°C to +60°C
  • Wafers or Carrier plate 6’ inch wafer.
  • ESC Chuck – Mono-polar Electrostatic Clamping
  • Gases available.
  • Cl2, BCl3, C4F8, CHF3, SF6, O2, Ar/N2