Lithography

Details of Clean Room Equipments in National Nano Fabrication Center Class 100, used during Standard Lithographic Processes such as Spinning Photoresist, Photoresist Baking, E-Beam Lithography, Mask Generation, UV Lithographic Exposure, Development and Lithography Resources.

List of chemicals available in Lithography bay can be found here

EVG 620

EVG620 is a "SEMI-AUTOMATIC" Contact Photo-Lithographic Alignment and Exposure Tool. It also has the Capability of Front to Back Alignment of Patterns and Aligning wafer stack for the Anodic bonder. Recipes for different Exposure types and Contact Modes can be Pre-Written and is very User friendly. The equipment for Optical Lithography allows for selectively masking and exposure of certain areas of the sample substrate using a ”MASK” and ”SET OF MASK”. Masks are realized in advance by Laser Writer by Etching a Thin Metallic Layer deposited onto a special Glass Slide.

MJB4

Suss MicroTec Mask aligner is a "SEMI-AUTOMATIC" Contact Photo-Lithographic Alignment and Exposure Tool with the above mentioned Specifications. It also has the Capability of Front to Back Alignment of Patterns. Recipes for different Exposure types and Contact Modes can be Pre-Written and is very User friendly.

Raith Pioneer

Electron Beam Lithography (EBL) allows users to write patterns with extremely high resolution, smaller than 10nm in size. It makes use of a highly energetic, tightly focused electron beam, which is scanned over a sample coated with an electron-sensitive resist. The electron beam scans the image according to a pattern defined on a CAD file. The sample is then developed in an appropriate solvent which reveals the structures defined into the resist. This acts as a mold for subsequent pattern transfer techniques such as dry etching or metal lift-off.

Raith e-Line

Electron Beam Lithography (EBL) allows users to write patterns with extremely high resolution, smaller than 10nm in size. It makes use of a highly energetic, tightly focused electron beam, which is scanned over a sample coated with an electron-sensitive resist. The electron beam scans the image according to a pattern defined on a CAD file. The sample is then developed in an appropriate solvent which reveals the structures defined into the resist. This acts as a mold for subsequent pattern transfer techniques such as dry etching or metal lift-off.

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