Low Pressure CVD

Deposition
Furnace Processing

Four stacked furnace capable of processing twenty five 4 inch  wafers simultaneously at temperatures upto 950 deg C and low pressures of upto 500 millitorr.

Contamination Level: 
Tool Safety Level: 

Tube 1 (Silicon Nitride):

 

Tube 2 (Doped polysilicon and silicon germanium)

 

Tube 3 (Undoped polysilicon and silicon germanium)

 

Tube 4 (Low temperature oxide)

  • High and Low Temperature PSG and BPSG Oxide using Oxygen, Nitrogen, Silane, TEOS bubbler, 1% Diborane/Argon and 1% Phosphine/Argon at temperatures up to 950 Celsius (Please note that currently only LTO is available which uses silane and oxygen)
  • LPCVD Tube 4 LTO
  • Tube 1, Silicon nitride deposition: MOS Clean, High stress (>1GPa) and low stress (~100 MPa) nitride films 
  • Tube 2, Polysilicon/PolyGe/SiGe deposition: Metal contaminated, Level 3, amorphous and poly Si, Ge and Si-Ge deposition
  • Tube 3, Polysilicon/PolyGe/SiGe deposition: MOS clean, amorphous and poly Si, Ge and Si-Ge deposition
  • Tube 4, LTO, TEOS, BPSG, PSG deposition: MOS clean, Level 3, Low temperature SiO2, TEOS oxide, Boron and phosphorus doped oxide
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  • Tube 1. Silicon nitride training: Timing 10.00 am-1.00pm, First Tuesday of every month Material: Std process will be taught, along with safety parameters
  • Tube 2. Poly-Silicon doped training: Timing 10.00 am-1.00pm, Second Tuesday of every month Material: Std process will be taught, along with safety parameters
  • Tube 3. Poly-Silicon undoped training: Timing 10.00 am-1.00pm, Third Tuesday of every month Material: Std process will be taught, along with safety parameters
  • Tube 4. LTO training: Timing 10.00 am-1.00pm, Fourth Tuesday of every month Material: Std process will be taught, along with safety parameters

Cleanroom Equipment Training Form

(c) National Nanofabrication Centre, CeNSE, IISc, 2018.