Oxidation & Diffusion Furnace

Deposition
Furnace Processing

First Nano oxidation and diffusion furnaces for oxidation and dopant diffusion. These are MOS clean and wafers processed here should never have gone through a metal deposition step, even if the metal has been removed.

Tube 1 Oxide grown in the range of 5-150 nm

Tube 2 Oxide grown in the range of 300- 1000 nm

Tube 3 Phosphorus diffusion using POCl3

Tube 4 Boron diffusion using Diborane.  

First_nano_Furnace_-Oxdn__and_diffusion_timings

Capable of processing twenty five 4 “ wafers simultaneously and temperatures upto 1150 deg C. Wafers should come from Level 0 / 1 wet benches only.

Tube 1 (Dry oxidation furnace):

  • Has a lower rate of oxide growth, but a better film quality
  • Used for making thin oxides and silicon oxynitride
  • Gases available are oxygen, nitrous oxide and nitrogen
  • Temperatures up to 1150 deg C

Tube 2 (Pyrogenic furnace):

  • Uses pure steam for oxidation
  • Has a significantly higher rate of growth compared to dry oxidation
  • Used for making thicker oxides like field oxide
  • Gases available are Oxygen, Hydrogen and Nitrogen
  • Temperatures up to 1150 deg C

Tube 3 (Phosphorus diffusion furnace):

  • Uses POCl3 bubbler for doping
  • Gases available are oxygen and nitrogen
  • Temperatures up to 1150 deg C

Tube 4 (Boron diffusion furnace):

  • Uses diborane as the gaseous source
  • Gases available are diborane (1% in Ar), oxygen and nitrogen
  • Temperatures up to 1150 deg C
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(c) National Nanofabrication Centre, CeNSE, IISc, 2018.