Sputter deposition is a physical vapour deposition process for depositing thin films, sputtering means ejecting material from a target and depositing it on a substrate such as a silicon wafer. The target is the source material. Substrates are placed in a vacuum chamber and are pumped down to a prescribed process pressure. Sputtering starts when a negative charge is applied to the target material causing a plasma or glow discharge. Positive charged gas ions generated in the plasma region are attracted to the negatively biased target plate at a very high speed. This collision creates a momentum transfer and ejects atomic size particles from the target. These particles are deposited as a thin film into the surface of the substrates. Magnetron sputtering can be done either in DC or RF modes.
Make |
Anelva Sputtering Unit Model SPF-332H |
Cathodes |
Three numbers 3” planar magnetron cathodes |
Medium |
Argon plasma |
Gasses used |
Ar, O2, N2 |
Power Source |
Direct current for conductive materials, radio frequency for insulators |
Ultimate Pressure |
4X10-6 mbar |
Operating Parameters:
Argon pressure |
Depends upon the materials |
Sputter voltage |
5kv |
Substrate temperature |
150 °C |
Substrate to target distance |
5.2cm -10cm |
Deposition time |
Depends upon the thickness |
System Configuration:
Pumping System
Main Line: 600L/s. 4” oil diffusion pump (CDP-600)
4” liquid N2 trap (956-7152)
Roughing Line: 260L/m, direct drive mechanical rotary pump
(T-2012A)
Main Valve: 4” Butterfly valve
Gas Inlet Valve: Variable leak valve (951-9172)