ALD process is based on surface controlled thin film deposition. During coating, two or more chemical vapours or gaseous precursors react sequentially on the substrate surface, producing an amorphous solid thin film. ALD is an enabling technology offers precise control of the film thickness, at true nanometer scale. Pinhole free films for e.g., superior barriers, insulators and surface passivation. Accurate and Conformal coating on large area substrates and complex 3D objects, including porous bulk materials.
TFS 200 is an Atomic Layer Deposition (ALD) system from BENEQ, Finland. It belongs to the group of chemical vapour deposition methods.
Al2O3 Deposition: Trimethylaluminum (TMA) + Deionized (DI) Water (H2O)
17 ± 1.5 nm Al2O3 in 134 Cycle at 250°C
Average Thickness Measured: 16.83 nm
Average Refractive Index Measured: 1.67 at 632 nm
TiO2 Deposition: Titanium Isopropoxide + Deionized (DI) Water (H2O)
Al2O3 Deposition: TMA + Ozone process is being optimized.
Substrate temperature range: 25 - 500 °C
Single wafer: Ø 200 × 3 (mm)
Gas lines: up to 8
Liquid sources (+5 °C to ambient): up to 4, currently available TMA for Al.
Hot source HS 300 (ambient to 300 °C): up to 4, currently available for Ti iso-propoxide.
Hot source HS 500 (ambient to 500 °C): upto 2 , can be used for HfO2( not available).
Control system: PLC control with PC user interface
