• Substrate size: Deposition can be done on wide variety of sample (i.e., even polymer samples, glass samples and silicon substrates, small cut pieces to 8” wafer).
• Multiple depositions can be done like stack deposition.
• Dielectric materials like SiOx, SiNx, SiOxNy, GeOx.
• Semiconductor materials like a-Si, Ge, SiGe can be deposited.
• Phosphorus and boron doped oxide films can be deposited.
• Stoichiometry of the deposited material can be controlled.
• Film stress can be controlled by high/low frequency mixing techniques
Maximum deposition temperature : 3800C
Minimum deposition temperature : 1000C
High Frequency RF Generator:13.56 MHz ,600W
Low Frequency RF Generator: 350KHz-500W
Top electrode :RF driven (MHz and/or kHz).
Bottom Electrode: No RF Bias ( substrate).
Gases used are H2, SiH4, GeH4, CH4, NH3, CF4, N20, N2, Ar, 2%B2H6/Ar, 1%PH3/Ar.
Wafers or carrier plate up to 150mm dia.
Days: 2nd of each month
Slot timing: 15:00 till 17:00 Hours
User should undergo three practice sessions apart from the training slot, he/she is supposed to book the training slots and get their own sample.
Users are requested to submit the online training form (at least a day prior to the training slot) given in the link below.
Authorization of the user will depend upon a test conducted by the tool owner or technology manager.
Before starting of the training user should go through the training document/manual (see tool operating manual link below).
After the process is done; authorized users must enter the login/process details in the excel sheet which is at the cleanroom Dry Etch computer desktop.
Incase authorized users misuse the tool or breach the dry etch/cleanroom protocols authorization will be cancelled.