Deposition

Thermal Evaporator is inside the Glove Box.

Organic material deposition requires uniform and precise heating with excellent temperature and deposition rate control. This is commonly achieved using a source similar to an effusion furnace. In an effusion type source, evaporation of the target material occurs via electrical (Joule) heating of a refractory metal filament coiled around a alumina, ceramic, or quartz crucible. The crucible is heated above the melting or sublimation point of the source material to create adequate vapour pressure for deposition.

Sputter deposition is a physical vapour deposition process for depositing thin films, sputtering means ejecting material from a target and depositing it on a substrate such as a silicon wafer. The target is the source material. Substrates are placed in a vacuum chamber and are pumped down to a prescribed process pressure. Sputtering starts when a negative charge is applied to the target material causing a plasma or glow discharge. Positive charged gas ions generated in the plasma region are attracted to the negatively biased target plate at a very high speed.

A thermal evaporator uses an electric resistance heater to melt the material and raise its vapor pressure to a useful range. This is done in a high vacuum, both to allow the vapor to reach the substrate without reacting with or scattering against other gasphase atoms in the chamber, and reduce the incorporation of impurities from the residual gas in the vacuum chamber. Thermal evaporation is the simplest way of depositing material onto a substrate.

System for oxidation and oxy-nitridation carrying gases O2, N2, N2O and Ar. This is a MOS clean system and wafers processed here should never have gone through a metal deposition step, even if the metal has been removed. Wafers should come from Level 0 / 1 wet benches only.

RTP system which heats silicon wafers to high temperatures (up to 1100 °C ) on a timescale of several seconds or less. During cooling, however, wafer temperatures must be brought down slowly to prevent dislocations and wafer breakage due to thermal shock, Available gases N2,Ar,O2 AndH2

It can used for Annealing Contact Alloying, Rapid Thermal Oxidation (RTO), Rapid Thermal Nitridation (RTN),Densification and Crystallization, Silicidation etc.

Two stacked furnace dedicated for processing twenty five 4 “wafers simultaneously and temperatures upto 1150 deg C. 

First Nano oxidation and diffusion furnaces for oxidation and dopant diffusion. These are MOS clean and wafers processed here should never have gone through a metal deposition step, even if the metal has been removed.

Electron-beam evaporation, uses a focused beam of electrons to heat the metal for deposition. A controlled deposition of thin-films is achieved. Both dielectrics and metals can be deposited using solid sources. The material is kept in a water-cooled crucible and exposed to the electron beam, causing it to vaporize and condense on the wafers / samples. Planetary substrate rotation provides uniform deposition. Radiant heaters are provided for substrate heating. Option for Ion Assisted deposition, Co-deposition and Ion Etching is also available.

Sputtering is one of the most widely used techniques for depositing thin films. The target is a plate of the materials to be deposited or the material from which a film is synthesized. Because it is connected to the negative terminal of a dc or RF power supply, the target is also known as the cathode. Typically, several kilovolts are applied to it. The substrate that faces the cathode may be grounded, electrically floating, biased positively or negatively, heated, cooled, or some combination of these.