Dry Etch

Inductive couple Plasma chemical Vapor Deposition is a process where high density plasmas is created with the ICP source. This technique delivers deposition of high qualitydielectric films at low temperature with low damage. Low temperature deposition means that temperature sensitive films and devices can be processed successfully

Ashing tool for ashing resists and other polymeric materials.

ICPRIE from Plasmatherm is dedicated to etching materials like PZT, AlN etc. The tool which has both chlorine and fluorine chemistries available is also used to etch novel materials which are currently not allowed in other RIE's at NNFC

The SPTS LPX Pegasus Deep Reactive Ion Etching (DRIE) system is designed to provide high aspect ratio etching of single crystal silicon using inductively coupled plasma (ICP) and reactive ion etching (RIE). With Advanced Silicon Etch (ASE) licensed Bosch process, hundreds of micrometers thick of microstructures can be obtained up to ~20:1 aspect ratio.

Reactive Ion Etching (RIE) is an etching technology used in micro and nano fabrication wherein plasma is used to remove materials deposited on the substrate. Plasma is generated under low pressure by electromagnetic field. High energy ions from the plasma attack the wafer surface and react with it to remove the film. PlasmaLab system 100 ICP 180 is a Reactive Ion Etching tool from Oxford Instruments.

Reactive Ion Etching (RIE) is an etching technology used in micro and nano fabrication wherein plasma is used to remove materials deposited on the substrate. Plasma is generated under low pressure by electromagnetic field. High energy ions from the plasma attack the wafer surface and react with it to remove the film. PlasmaLab system 100 ICP 380 is a Reactive Ion Etching tool from Oxford Instruments.